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BD135G Технические параметры

ON Semiconductor  BD135G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 25
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 45V
Max Power Dissipation 1.25W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD135
Pin Count 3
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
Height 11.04mm
Length 7.74mm
Width 2.66mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD135G Документы

BD135G brand manufacturers: ON Semiconductor, Anli stock, BD135G reference price.ON Semiconductor. BD135G parameters, BD135G Datasheet PDF and pin diagram description download.You can use the BD135G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD135G pin diagram and circuit diagram and usage method of function,BD135G electronics tutorials.You can download from the Anli.