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BD13810STU Технические параметры

ON Semiconductor  BD13810STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC -60V
Свойство продукта Значение свойства
Max Power Dissipation 1.25W
Current Rating -1.5A
Base Part Number BD138
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 3MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Height 11mm
Length 8mm
Width 3.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD13810STU Документы

BD13810STU brand manufacturers: ON Semiconductor, Anli stock, BD13810STU reference price.ON Semiconductor. BD13810STU parameters, BD13810STU Datasheet PDF and pin diagram description download.You can use the BD13810STU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD13810STU pin diagram and circuit diagram and usage method of function,BD13810STU electronics tutorials.You can download from the Anli.