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BD13816STU Технические параметры

ON Semiconductor  BD13816STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Voltage - Rated DC -60V
Max Power Dissipation 12.5W
Current Rating -1.5A
Base Part Number BD138
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Height 11mm
Length 8mm
Width 3.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BD13816STU Документы

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