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BD138G Технические параметры

ON Semiconductor  BD138G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Supplier Device Package TO-225AA
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 1.5A
Number of Elements 1 Element
hFEMin 25
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 1.25W
Current Rating -1.5A
Свойство продукта Значение свойства
Base Part Number BD138
Polarity PNP
Element Configuration Single
Power Dissipation 1.25W
Power - Max 1.25W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 50MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 11.04mm
Length 7.74mm
Width 2.66mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD138G Документы

BD138G brand manufacturers: ON Semiconductor, Anli stock, BD138G reference price.ON Semiconductor. BD138G parameters, BD138G Datasheet PDF and pin diagram description download.You can use the BD138G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD138G pin diagram and circuit diagram and usage method of function,BD138G electronics tutorials.You can download from the Anli.