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BD139G Технические параметры

ON Semiconductor  BD139G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 9 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
hFEMin 25
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 80V
Свойство продукта Значение свойства
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD139
Pin Count 3
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 11.04mm
Length 7.74mm
Width 2.66mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BD139G Документы

BD139G brand manufacturers: ON Semiconductor, Anli stock, BD139G reference price.ON Semiconductor. BD139G parameters, BD139G Datasheet PDF and pin diagram description download.You can use the BD139G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD139G pin diagram and circuit diagram and usage method of function,BD139G electronics tutorials.You can download from the Anli.