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ON Semiconductor BD435STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Single | |
Марка | ON Semiconductor | |
Lifecycle Status | LIFETIME (Last Updated: 1 week ago) | |
Factory Lead Time | 12 Weeks | |
Contact Plating | Tin | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-225AA, TO-126-3 | |
Number of Pins | 3Pins | |
Weight | 760.986249mg | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 32V | |
Number of Elements | 1 Element | |
hFEMin | 40 | |
Operating Temperature | 150°C TJ | |
Packaging | Tube | |
Published | 2017 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Voltage - Rated DC | 32V |
Свойство продукта | Значение свойства | |
---|---|---|
Max Power Dissipation | 36W | |
Current Rating | 4A | |
Frequency | 3MHz | |
Base Part Number | BD435 | |
Voltage | 32V | |
Element Configuration | Single | |
Current | 4A | |
Power Dissipation | 36W | |
Transistor Application | SWITCHING | |
Gain Bandwidth Product | 3MHz | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 32V | |
Max Collector Current | 4A | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 5V | |
Current - Collector Cutoff (Max) | 100μA | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
Transition Frequency | 3MHz | |
Collector Base Voltage (VCBO) | 32V | |
Emitter Base Voltage (VEBO) | 5V | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |