ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

BD435STU Технические параметры

ON Semiconductor  BD435STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 760.986249mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 32V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 32V
Свойство продукта Значение свойства
Max Power Dissipation 36W
Current Rating 4A
Frequency 3MHz
Base Part Number BD435
Voltage 32V
Element Configuration Single
Current 4A
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
BD435STU brand manufacturers: ON Semiconductor, Anli stock, BD435STU reference price.ON Semiconductor. BD435STU parameters, BD435STU Datasheet PDF and pin diagram description download.You can use the BD435STU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD435STU pin diagram and circuit diagram and usage method of function,BD435STU electronics tutorials.You can download from the Anli.