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BD438S Технические параметры

ON Semiconductor  BD438S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC -45V
Свойство продукта Значение свойства
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -4A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD438
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) -45V
Emitter Base Voltage (VEBO) -5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD438S Документы

BD438S brand manufacturers: ON Semiconductor, Anli stock, BD438S reference price.ON Semiconductor. BD438S parameters, BD438S Datasheet PDF and pin diagram description download.You can use the BD438S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD438S pin diagram and circuit diagram and usage method of function,BD438S electronics tutorials.You can download from the Anli.