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BD679AG Технические параметры

ON Semiconductor  BD679AG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 750
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 80V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 4A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD679
Pin Count 3
Polarity NPN
Voltage 80V
Element Configuration Single
Current 2A
Power Dissipation 40W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Transition Frequency 1MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 11.04mm
Length 7.74mm
Width 2.66mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BD679AG Документы

BD679AG brand manufacturers: ON Semiconductor, Anli stock, BD679AG reference price.ON Semiconductor. BD679AG parameters, BD679AG Datasheet PDF and pin diagram description download.You can use the BD679AG Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD679AG pin diagram and circuit diagram and usage method of function,BD679AG electronics tutorials.You can download from the Anli.