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BD679AS Технические параметры

ON Semiconductor  BD679AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 760.986249mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 750
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 80V
Свойство продукта Значение свойства
Max Power Dissipation 40W
Current Rating 4A
Base Part Number BD679
Polarity NPN
Voltage 80V
Element Configuration Single
Current 2A
Power Dissipation 40W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD679AS Документы

BD679AS brand manufacturers: ON Semiconductor, Anli stock, BD679AS reference price.ON Semiconductor. BD679AS parameters, BD679AS Datasheet PDF and pin diagram description download.You can use the BD679AS Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD679AS pin diagram and circuit diagram and usage method of function,BD679AS electronics tutorials.You can download from the Anli.