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BD679ASTU Технические параметры

ON Semiconductor  BD679ASTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 750
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 80V
Свойство продукта Значение свойства
Max Power Dissipation 40W
Current Rating 4A
Base Part Number BD679
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Transition Frequency 10MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 11mm
Length 8mm
Width 3.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BD679ASTU Документы

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