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BD679G Технические параметры

ON Semiconductor  BD679G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 750
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1995
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 80V
Свойство продукта Значение свойства
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD679
Pin Count 3
Polarity NPN
Voltage 80V
Element Configuration Single
Current 2A
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BD679G Документы

BD679G brand manufacturers: ON Semiconductor, Anli stock, BD679G reference price.ON Semiconductor. BD679G parameters, BD679G Datasheet PDF and pin diagram description download.You can use the BD679G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD679G pin diagram and circuit diagram and usage method of function,BD679G electronics tutorials.You can download from the Anli.