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BDX53ATU Технические параметры

ON Semiconductor  BDX53ATU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 36 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 750
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 60V
Max Power Dissipation 60W
Current Rating 8A
Свойство продукта Значение свойства
Base Part Number BDX53
Polarity NPN
Element Configuration Single
Power Dissipation 60W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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BDX53ATU Документы

BDX53ATU brand manufacturers: ON Semiconductor, Anli stock, BDX53ATU reference price.ON Semiconductor. BDX53ATU parameters, BDX53ATU Datasheet PDF and pin diagram description download.You can use the BDX53ATU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDX53ATU pin diagram and circuit diagram and usage method of function,BDX53ATU electronics tutorials.You can download from the Anli.