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BDX53BTU Технические параметры

ON Semiconductor  BDX53BTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Weight 1.8g
Collector-Emitter Breakdown Voltage 80V
Current-Collector (Ic) (Max) 8A
Number of Elements 1 Element
hFEMin 750
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 80V
Свойство продукта Значение свойства
Max Power Dissipation 60W
Current Rating 8A
Base Part Number BDX53
Polarity NPN
Element Configuration Single
Power Dissipation 60W
Power - Max 60W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
RoHS Status RoHS Compliant
Lead Free Lead Free

BDX53BTU Документы

BDX53BTU brand manufacturers: ON Semiconductor, Anli stock, BDX53BTU reference price.ON Semiconductor. BDX53BTU parameters, BDX53BTU Datasheet PDF and pin diagram description download.You can use the BDX53BTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDX53BTU pin diagram and circuit diagram and usage method of function,BDX53BTU electronics tutorials.You can download from the Anli.