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BDX53C Технические параметры

ON Semiconductor  BDX53C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Number of Elements 1 Element
hFEMin 750
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Voltage - Rated DC 100V
Max Power Dissipation 60W
Current Rating 8A
Base Part Number BDX53
Свойство продукта Значение свойства
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Transition Frequency 20MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Height 15.95mm
Length 10mm
Width 4.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

BDX53C Документы

BDX53C brand manufacturers: ON Semiconductor, Anli stock, BDX53C reference price.ON Semiconductor. BDX53C parameters, BDX53C Datasheet PDF and pin diagram description download.You can use the BDX53C Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDX53C pin diagram and circuit diagram and usage method of function,BDX53C electronics tutorials.You can download from the Anli.