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ON Semiconductor BF199 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-92-3 | |
| Weight | 202mg | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| hFEMin | 38 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 350mW | |
| Current Rating | 50mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 1.1GHz | |
| Base Part Number | BF199 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 350mW | |
| Power - Max | 350mW | |
| Gain Bandwidth Product | 1.1 GHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 38 @ 7mA 10V | |
| Voltage - Collector Emitter Breakdown (Max) | 25V | |
| Max Frequency | 1.1GHz | |
| Frequency - Transition | 1.1GHz | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 4V | |
| Continuous Collector Current | 50mA | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |