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BSS138-G Технические параметры

ON Semiconductor  BSS138-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Package / Case SOT-23-3
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package SOT-23-3 (TO-236)
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles SMD/SMT
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 220 mA
Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 1.7 nC
Minimum Operating Temperature - 50 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 350 mW
Channel Mode Enhancement
Forward Transconductance - Min 0.12 S
Factory Pack QuantityFactory Pack Quantity 3000
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 2.5 ns
Unit Weight 0.000282 oz
Continuous Drain Current Id 220
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number BSS138
Current - Continuous Drain (Id) @ 25℃ 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr onsemi
Power Dissipation (Max) 360mW (Ta)
Product Status Active
Package Description SMALL OUTLINE, R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Свойство продукта Значение свойства
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number BSS138-G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Risk Rank 5.48
Drain Current-Max (ID) 0.22 A
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G3
Configuration Single
Number of Channels 1 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power Dissipation 360
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 27 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 50 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Transistor Type 1 N-Channel
Drain-source On Resistance-Max 6 Ω
DS Breakdown Voltage-Min 50 V
Channel Type N
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -

BSS138-G Документы

  • Datasheets
BSS138-G brand manufacturers: ON Semiconductor, Anli stock, BSS138-G reference price.ON Semiconductor. BSS138-G parameters, BSS138-G Datasheet PDF and pin diagram description download.You can use the BSS138-G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSS138-G pin diagram and circuit diagram and usage method of function,BSS138-G electronics tutorials.You can download from the Anli.