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BUD42D-1G Технические параметры

ON Semiconductor  BUD42D-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount NO
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 350V
Number of Elements 1 Element
hFEMin 8
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN ANTISATURATION NETWORK
Voltage - Rated DC 350V
Max Power Dissipation 25W
Свойство продукта Значение свойства
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BUD42
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 2A
Collector Base Voltage (VCBO) 650V
Emitter Base Voltage (VEBO) 9V
RoHS Status RoHS Compliant
Lead Free Lead Free

BUD42D-1G Документы

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