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BUD42DT4G Технические параметры

ON Semiconductor  BUD42DT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 350V
hFEMin 8
Number of Elements 1 Element
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -65°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN ANTISATURATION NETWORK
Voltage - Rated DC 350V
Max Power Dissipation 25W
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BUD42
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 2A
Max Frequency 1MHz
Collector Base Voltage (VCBO) 650V
Emitter Base Voltage (VEBO) 9V
Height 2.38mm
Length 6.73mm
Width 6.22mm
RoHS Status RoHS Compliant
Radiation Hardening No
Lead Free Lead Free

BUD42DT4G Документы

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