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BUT12A Технические параметры

ON Semiconductor  BUT12A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Collector-Emitter Breakdown Voltage 450V
Current-Collector (Ic) (Max) 8A
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 450V
Свойство продукта Значение свойства
Max Power Dissipation 100W
Current Rating 8A
Base Part Number BUT12A
Polarity NPN
Element Configuration Single
Power Dissipation 100W
Power - Max 100W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 8A
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max) 450V
Collector Base Voltage (VCBO) 1kV
RoHS Status RoHS Compliant
Lead Free Lead Free
BUT12A brand manufacturers: ON Semiconductor, Anli stock, BUT12A reference price.ON Semiconductor. BUT12A parameters, BUT12A Datasheet PDF and pin diagram description download.You can use the BUT12A Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BUT12A pin diagram and circuit diagram and usage method of function,BUT12A electronics tutorials.You can download from the Anli.