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BUV26G Технические параметры

ON Semiconductor  BUV26G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Operating Temperature -65°C~175°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 90V
Max Power Dissipation 85W
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BUV26
Pin Count 3
Element Configuration Single
Power Dissipation 85W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 90V
Max Collector Current 20A
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.2A, 12A
Transition Frequency 330MHz
Max Breakdown Voltage 90V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
Height 15.75mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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BUV26G Документы

BUV26G brand manufacturers: ON Semiconductor, Anli stock, BUV26G reference price.ON Semiconductor. BUV26G parameters, BUV26G Datasheet PDF and pin diagram description download.You can use the BUV26G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BUV26G pin diagram and circuit diagram and usage method of function,BUV26G electronics tutorials.You can download from the Anli.