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DTA113EET1G Технические параметры

ON Semiconductor  DTA113EET1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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DTA113EET1G Документы

DTA113EET1G brand manufacturers: ON Semiconductor, Anli stock, DTA113EET1G reference price.ON Semiconductor. DTA113EET1G parameters, DTA113EET1G Datasheet PDF and pin diagram description download.You can use the DTA113EET1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTA113EET1G pin diagram and circuit diagram and usage method of function,DTA113EET1G electronics tutorials.You can download from the Anli.