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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DTC123JET1G
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DTC123JET1G Технические параметры
ON Semiconductor DTC123JET1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 0.047 | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | DTC123 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Resistor - Base (R1) | 2.2 k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Height | 800μm | |
| Length | 1.65mm | |
| Width | 900μm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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