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ON Semiconductor ECH8655R-R-TL-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Factory Lead Time | 15 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Number of Pins | 8Pins | |
| Turn Off Delay Time | 2.4 μs | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e6 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Operating Temperature | 150°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55°C | |
| Power Dissipation | 1.4W | |
| Turn On Delay Time | 320 ns | |
| Rise Time | 1.1μs | |
| Polarity/Channel Type | N-CHANNEL | |
| Fall Time (Typ) | 2.1 μs | |
| Continuous Drain Current (ID) | 9A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Drain to Source Breakdown Voltage | 24V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 17mOhm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |