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ECH8657-TL-H Технические параметры
ON Semiconductor ECH8657-TL-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead | |
| Number of Pins | 8Pins | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 1.5W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 8 | |
| Element Configuration | Dual | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 59m Ω @ 2A, 10V | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V | |
| Rise Time | 11ns | |
| Drain to Source Voltage (Vdss) | 35V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 4.5A | |
| Gate to Source Voltage (Vgs) | 20V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
ECH8657-TL-H Документы
- Environmental InformationMaterial Declaration ECH8657-TL-H
- DatasheetsECH8657
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