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ECH8659-TL-W Технические параметры

ON Semiconductor  ECH8659-TL-W technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 23 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish Tin/Bismuth (Sn/Bi)
Additional Feature ESD PROTECTED
Max Power Dissipation 1.3W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.3W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ECH8659-TL-W Документы

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