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EFC6602R-A-TR Технические параметры
ON Semiconductor EFC6602R-A-TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFBGA, FCBGA | |
| Number of Pins | 6Pins | |
| Turn Off Delay Time | 6.2 μs | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 2W | |
| Element Configuration | Dual |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 530 ns | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| Halogen Free | Halogen Free | |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V | |
| Rise Time | 2.1μs | |
| Drain to Source Voltage (Vdss) | 12V | |
| Fall Time (Typ) | 5.5 μs | |
| Continuous Drain Current (ID) | 53A | |
| Gate to Source Voltage (Vgs) | 12V | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Resistance | 5.9mOhm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
EFC6602R-A-TR Документы
- Environmental InformationMaterial Declaration EFC6602R-A-TR
- Datasheets
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