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EFC6605R-TR Технические параметры
ON Semiconductor EFC6605R-TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, No Lead | |
| Number of Pins | 6Pins | |
| Weight | 65.99769mg | |
| Turn Off Delay Time | 44.4 μs | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1.6W | |
| Number of Channels | 2Channels | |
| Turn On Delay Time | 154 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Gate Charge (Qg) (Max) @ Vgs | 19.8nC @ 4.5V | |
| Rise Time | 678ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 60.8 μs | |
| Continuous Drain Current (ID) | 10A | |
| Gate to Source Voltage (Vgs) | 10V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Resistance | 13.3mOhm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
EFC6605R-TR Документы
- ReachStatementON-Semiconductor-company-79.pdf
- Environmental InformationMaterial Declaration EFC6605R-TR
- DatasheetsEFC6605R
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