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EMF5XV6T1G Технические параметры

ON Semiconductor  EMF5XV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 100mA, 500mA
Base Product Number EMF5XV
Mfr onsemi
Product Status Active
Свойство продукта Значение свойства
Series EMF
Power - Max 357mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 270 @ 10mA, 2V
Current - Collector Cutoff (Max) 500nA, 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 50V, 12V
Frequency - Transition -
Resistor - Base (R1) 47kOhms
Resistor - Emitter Base (R2) -
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EMF5XV6T1G Документы

  • Datasheets
EMF5XV6T1G brand manufacturers: ON Semiconductor, Anli stock, EMF5XV6T1G reference price.ON Semiconductor. EMF5XV6T1G parameters, EMF5XV6T1G Datasheet PDF and pin diagram description download.You can use the EMF5XV6T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find EMF5XV6T1G pin diagram and circuit diagram and usage method of function,EMF5XV6T1G electronics tutorials.You can download from the Anli.