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FDB035AN06A0 Технические параметры

ON Semiconductor  FDB035AN06A0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.31247g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22A Ta 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 310W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 3.5MOhm
Voltage - Rated DC 60V
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 80A
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Rise Time 93ns
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 625 mJ
Height 4.83mm
Length 10.67mm
Width 11.33mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDB035AN06A0 Документы

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