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FDB075N15A-F085 Технические параметры
ON Semiconductor FDB075N15A-F085 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 33 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 1.31247g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 110A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 333W Tc | |
| Turn Off Delay Time | 76 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101, PowerTrench® | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 33 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5595pF @ 75V | |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V | |
| Rise Time | 46ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 110A | |
| Gate to Source Voltage (Vgs) | 4V | |
| Drain-source On Resistance-Max | 0.0075Ohm | |
| Drain to Source Breakdown Voltage | 150V | |
| Avalanche Energy Rating (Eas) | 502 mJ | |
| RoHS Status | ROHS3 Compliant |
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