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FDB44N25TM Технические параметры

ON Semiconductor  FDB44N25TM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2Pins
Weight 1.31247g
Transistor Element Material SILICON
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 307W Tc
Current - Continuous Drain (Id) @ 25℃ 44A Tc
Turn Off Delay Time 85 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UniFET™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 69mOhm
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Voltage - Rated DC 250V
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 44A
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 307W
Case Connection DRAIN
Turn On Delay Time 55 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 69m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 400ns
Vgs (Max) ±30V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 5 V
Height 4.83mm
Length 10.67mm
Width 11.33mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDB44N25TM Документы

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