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FDB8896 Технические параметры

ON Semiconductor  FDB8896 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.31247g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Ta 93A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 80W Tc
Turn Off Delay Time 58 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 5.7MOhm
Voltage - Rated DC 30V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Current Rating 93A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 102ns
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Continuous Drain Current (ID) 93A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 74 mJ
Height 1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDB8896 Документы

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