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FDC5612_NL Технические параметры
ON Semiconductor FDC5612_NL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Panel Mount, Through Hole | |
| Surface Mount | YES | |
| Mounting Feature | Flange | |
| Shell Material | Aluminum | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Package | Retail Package | |
| Primary Material | Metal | |
| Mfr | Glenair | |
| Product Status | Active | |
| Contact Materials | Copper Alloy | |
| Contact Finish Mating | Gold | |
| Package Description | LEAD FREE, SUPERSOT-6 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | FDC5612_NL | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Fairchild Semiconductor Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Risk Rank | 5.38 | |
| Part Package Code | SOT | |
| Drain Current-Max (ID) | 4.3 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -65°C ~ 175°C | |
| Series | 806 | |
| JESD-609 Code | e3 | |
| Termination | Solder | |
| ECCN Code | EAR99 | |
| Connector Type | Plug, Male Pins | |
| Terminal Finish | Matte Tin (Sn) | |
| Color | Olive Drab | |
| Fastening Type | Threaded | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Orientation | D | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Shell Finish | Olive Drab Cadmium | |
| Pin Count | 6 | |
| Shell Size - Insert | 12-20A | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.6 W |
FDC5612_NL Документы
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