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FDC5614P-G Технические параметры

ON Semiconductor  FDC5614P-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Package Tape & Reel (TR)
Base Product Number FDC5614
Current - Continuous Drain (Id) @ 25℃ 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr onsemi
Power Dissipation (Max) 800mW (Ta)
Product Status Obsolete
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Series PowerTrench®
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 759 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
FET Feature -
Просмотр сходства
FDC5614P-G brand manufacturers: ON Semiconductor, Anli stock, FDC5614P-G reference price.ON Semiconductor. FDC5614P-G parameters, FDC5614P-G Datasheet PDF and pin diagram description download.You can use the FDC5614P-G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FDC5614P-G pin diagram and circuit diagram and usage method of function,FDC5614P-G electronics tutorials.You can download from the Anli.