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FDC608PZ-F171 Технические параметры
ON Semiconductor FDC608PZ-F171 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Factory Lead Time | 1 Week | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Surface Mount | YES | |
| Supplier Device Package | SuperSOT™-6 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Continuous Drain Current Id | 5.8 | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Package | Bulk | |
| Mfr | onsemi | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 5.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Power Dissipation (Max) | 800mW (Ta) | |
| Package Description | SOT-6, 6 PIN | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | 419BL | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | FDC608PZ-F171 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Risk Rank | 5.69 | |
| Drain Current-Max (ID) | 5.8 A | |
| Series | * | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Pbfree Code | Yes | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.6 | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Vgs (Max) | ±12V | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| Channel Type | P | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| FET Feature | - |
FDC608PZ-F171 Документы
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