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FDC6303N Технические параметры
ON Semiconductor FDC6303N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Weight | 36mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 450mOhm | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 900mW | |
| Terminal Form | GULL WING | |
| Current Rating | 680mA | |
| Number of Channels | 2Channels |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 900mW | |
| Turn On Delay Time | 3 ns | |
| Power - Max | 700mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 500mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | |
| Rise Time | 8.5ns | |
| Fall Time (Typ) | 13 ns | |
| Continuous Drain Current (ID) | 680mA | |
| Threshold Voltage | 800mV | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain to Source Breakdown Voltage | 25V | |
| Dual Supply Voltage | 25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 800 mV | |
| Height | 1.1mm | |
| Length | 3mm | |
| Width | 1.7mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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