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FDC6312P Технические параметры

ON Semiconductor  FDC6312P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Weight 36mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 18 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 115MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Max Power Dissipation 960mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -2.3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Qualification Status Not Qualified
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 8 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 2.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 467pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage -900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -900 mV
Height 1.1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDC6312P Документы

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