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FDC6318P Технические параметры

ON Semiconductor  FDC6318P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Weight 36mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A
Number of Elements 2 Elements
Turn Off Delay Time 21 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating -2.5A
Свойство продукта Значение свойства
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 9 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 14ns
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) -2.5A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 1.1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDC6318P Документы

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