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FDC655BN-F40 Технические параметры
ON Semiconductor FDC655BN-F40 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Surface Mount | YES | |
| Supplier Device Package | SuperSOT™-6 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Base Product Number | FDC655 | |
| Current - Continuous Drain (Id) @ 25℃ | 6.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | onsemi | |
| Power Dissipation (Max) | 800mW (Tc) | |
| Product Status | Obsolete | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | 419BL | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | FDC655BN-F40 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.7 | |
| Drain Current-Max (ID) | 6.3 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | PowerTrench® | |
| Pbfree Code | Yes | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.3A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| FET Feature | - | |
| Feedback Cap-Max (Crss) | 90 pF |
FDC655BN-F40 Документы
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