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ON Semiconductor FDD8424H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
Factory Lead Time | 17 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD | |
Number of Pins | 5Pins | |
Weight | 260.37mg | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 9A 6.5A | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 20 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | PowerTrench® | |
Published | 2014 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 4Terminations | |
ECCN Code | EAR99 | |
Resistance | 24MOhm | |
Terminal Finish | Tin (Sn) | |
Max Power Dissipation | 3.1W | |
Terminal Position | SINGLE | |
Terminal Form | GULL WING | |
Base Part Number | FDD8424 | |
JESD-30 Code | R-PSSO-G4 |
Свойство продукта | Значение свойства | |
---|---|---|
Number of Channels | 2Channels | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 3.1W | |
Case Connection | DRAIN | |
Turn On Delay Time | 7 ns | |
Power - Max | 1.3W | |
FET Type | N and P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 24m Ω @ 9A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 20V | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
Rise Time | 3ns | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Fall Time (Typ) | 3 ns | |
Continuous Drain Current (ID) | 9A | |
Threshold Voltage | 1.7V | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 9A | |
Drain to Source Breakdown Voltage | 40V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Max Junction Temperature (Tj) | 150°C | |
FET Feature | Logic Level Gate | |
Height | 2.517mm | |
Length | 6.73mm | |
Width | 6.22mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |