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FDD8424H Технические параметры

ON Semiconductor  FDD8424H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins 5Pins
Weight 260.37mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A 6.5A
Number of Elements 2 Elements
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish Tin (Sn)
Max Power Dissipation 3.1W
Terminal Position SINGLE
Terminal Form GULL WING
Base Part Number FDD8424
JESD-30 Code R-PSSO-G4
Свойство продукта Значение свойства
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 7 ns
Power - Max 1.3W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 3ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 2.517mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDD8424H Документы

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