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ON Semiconductor FDD8424H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 17 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD | |
| Number of Pins | 5Pins | |
| Weight | 260.37mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A 6.5A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 24MOhm | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 3.1W | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Base Part Number | FDD8424 | |
| JESD-30 Code | R-PSSO-G4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 7 ns | |
| Power - Max | 1.3W | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Rise Time | 3ns | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 9A | |
| Threshold Voltage | 1.7V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Drain to Source Breakdown Voltage | 40V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Height | 2.517mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |