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FDG6318PZ Технические параметры

ON Semiconductor  FDG6318PZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 28mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 780MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 780m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 85.4pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.62nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDG6318PZ Документы

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