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FDG6320C Технические параметры

ON Semiconductor  FDG6320C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 28mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 220mA 140mA
Number of Elements 2 Elements
Turn Off Delay Time 9 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 220mA
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 8ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDG6320C Документы

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