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FDG8842CZ Технические параметры

ON Semiconductor  FDG8842CZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 28mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 750mA 410mA
Number of Elements 2 Elements
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 400MOhm
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.44nC @ 4.5V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V 25V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 750mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) -8V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1mm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDG8842CZ Документы

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