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ON Semiconductor FDMA1025P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Weight | 40mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.1A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 700mW | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | -3.1A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.4W | |
| Turn On Delay Time | 5 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 155m Ω @ 3.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4.5V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 14 ns | |
| Continuous Drain Current (ID) | -3.1A | |
| Threshold Voltage | -900mV | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -20V | |
| Pulsed Drain Current-Max (IDM) | 6A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 750μm | |
| Length | 2mm | |
| Width | 2mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |