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FDMB3800N Технические параметры

ON Semiconductor  FDMB3800N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8Pins
Weight 47mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 21 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation 1.6W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Свойство продукта Значение свойства
Turn On Delay Time 8 ns
Power - Max 750mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 4.8A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 60 pF
Height 750μm
Length 3mm
Width 1.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDMB3800N Документы

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