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FDMB3900AN Технические параметры

ON Semiconductor  FDMB3900AN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8Pins
Weight 60μg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature ULTRA-LOW RESISTANCE
Max Power Dissipation 800mW
JESD-30 Code R-PDSO-N6
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 3mm
Width 1.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDMB3900AN Документы

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