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FDMC8032L Технические параметры
ON Semiconductor FDMC8032L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 hours ago) | |
| Factory Lead Time | 11 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerWDFN | |
| Number of Pins | 8Pins | |
| Weight | 196mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2017 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Max Power Dissipation | 12W | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | S-PDSO-N4 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5.5 ns | |
| Power - Max | 1.9W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Rise Time | 1.2ns | |
| Fall Time (Typ) | 1.3 ns | |
| Continuous Drain Current (ID) | 20A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 7A | |
| Drain to Source Breakdown Voltage | 40V | |
| Pulsed Drain Current-Max (IDM) | 50A | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 750μm | |
| Length | 3mm | |
| Width | 3mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
FDMC8032L Документы
- Environmental InformationMaterial Declaration FDMC8032L
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN PackagingMult Devices 24/Oct/2017
- Datasheets
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