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FDME1024NZT Технические параметры

ON Semiconductor  FDME1024NZT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 6Pins
Weight 25.2mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2008
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION
Max Power Dissipation 1.4W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
Power - Max 600mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Rise Time 2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 1.7 ns
Continuous Drain Current (ID) 3.8A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.4A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 40 pF
Height 500μm
Length 1.6mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDME1024NZT Документы

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