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FDME1034CZT Технические параметры
ON Semiconductor FDME1034CZT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UFDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Weight | 25.2mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.8A 2.6A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 33 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2017 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Additional Feature | ESD PROTECTION | |
| Max Power Dissipation | 1.4W | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 1.3W | |
| Case Connection | DRAIN | |
| Power - Max | 600mW | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 66m Ω @ 3.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V | |
| Rise Time | 4.8ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 3.8A | |
| Threshold Voltage | 700mV | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain Current-Max (Abs) (ID) | 3.4A | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 700 mV | |
| Feedback Cap-Max (Crss) | 40 pF | |
| Height | 500μm | |
| Length | 1.6mm | |
| Width | 1.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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