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FDMQ86530L Технические параметры
ON Semiconductor FDMQ86530L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 12-WDFN Exposed Pad | |
| Number of Pins | 12Pins | |
| Weight | 242.3mg | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | 511CR | |
| Number of Elements | 4 Elements | |
| Turn Off Delay Time | 22 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Digi-Reel® | |
| Series | GreenBridge™ PowerTrench® | |
| Published | 2010 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 12Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Max Power Dissipation | 1.9W | |
| Terminal Position | DUAL | |
| Configuration | COMPLEX | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.9W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Case Connection | DRAIN SOURCE | |
| Turn On Delay Time | 8.8 ns | |
| FET Type | 4 N-Channel (H-Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 17.5m Ω @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2295pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
| Rise Time | 3.8ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Fall Time (Typ) | 2.8 ns | |
| Continuous Drain Current (ID) | 8A | |
| Threshold Voltage | 1.8V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain-source On Resistance-Max | 0.0175Ohm | |
| Drain to Source Breakdown Voltage | 60V | |
| Pulsed Drain Current-Max (IDM) | 50A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 15 pF | |
| Turn On Time-Max (ton) | 28ns | |
| Height | 800μm | |
| Length | 5mm | |
| Width | 4.5mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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